PART |
Description |
Maker |
AS4C64M16D3A-12BAN |
96 ball FBGA PACKAGE
|
Alliance Semiconductor ...
|
ECG2331 ECG2326 ECG2322 ECG2328 ECG2332 ECG2333 |
FAN AC 176X89 220V BALL, 420cfm TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-220VAR FAN AC 172X51 115V BALL, 106cfm TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | TO-247VAR 晶体管|晶体管| npn型| 200伏五(巴西)总裁|5A一(c)|47VAR FAN AC 180X65 115V BALL, 400cfm 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁|甲一(c)|20 FAN AC 180X65 115V BALL, 340cfm 晶体管|晶体管|叩| 450V五(巴西)总裁| 8A条一c)| TO - 220AB现有
|
Vishay Intertechnology, Inc. NEC, Corp.
|
V53C1256162VALS7 V53C1256162VALS7E V53C1256162VALS |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
N.A. ETC[ETC]
|
BGA-320P-M06 |
PLASTIC BALL GRID ARRAY PACKAGE 320 PIN PLASTIC
|
Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited]
|
K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF- |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
|
Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
ST2764A-25CP ST2764A-18XCP ST2764A-20CP |
Stratix GX FPGA 10K 8-FBGA Stratix II FPGA 90K FBGA-780 x8存储 Stratix GX FPGA 10K 4-FBGA x8存储
|
Fujitsu, Ltd. STMicroelectronics N.V.
|
H5TQ1G83AFPR-G8C H5TQ1G63AFPR-G8C H5TQ1G43AFPR-G8C |
128M X 8 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78 64M X 16 DDR DRAM, PBGA96 HALOGEN FREE, FBGA-96 256M X 4 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
TriQuint Semiconductor, Inc. Jameco Electronics Anpec Electronics, Corp. SAMSUNG[Samsung semiconductor]
|
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144 4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM 256 MBit Synchronous DRAM 256兆位同步DRAM 256M (16Mx16) PC133 3-3-3 256Mb (32Mx8) FBGA PC133 3-3-3 256Mb (16Mx16) FBGA PC133 3-3-3 256Mb (64Mx4) PC133 3-3-3 256Mb (64Mx4) FBGA PC133 3-3-3 256 MBit Synchronous DRAM
|
Infineon Technologies AG Infineon Technologies A...
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